海角黑料

Optics and Photonics Research Group

Publications

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WAGNER, J., LARKINS, E.C., HERRES, N., RALSTON, J.D. and KOIDL, P., 1993. Applied Physics Letters. 63, 1842-

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RALSTON, J. D., WEISSER, S., ESQUIVAS, I., SCHONFELDER, A., LARKINS, E. C., ROSENZWEIG, J., TASKER, P. J., MAIER, M. and FLEISSNER, J., 1993. P-Dopant Incorporation and Influence on gain and Damping Behaviour in High-Speed GaAs-based Strained MQW Lasers In: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, at the 1993 E-MRS Spring Conference, 4th - 7th May 1993, Strasbourg, France..

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LARKINS, E.C., BENDER, G., SCHNEIDER, H., RALSTON, J.D., WAGNER, J., ROTHEMUND, W., DISCHLER, B., FLEISSNER, J. and KOIDL, P., 1993. Journal of Crystal Growth. 127, 62-

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RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., SCHONFELDER, A., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J., MAIER, M. and FLEISSNER, J., 1993. p-dopant incorporation and influence on gain and damping behavior in high-speed GaAs-based strained MQW lasers Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B21, 232-

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RALSTON, J.D., WEISSER, S., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1993. 30 GHz direct modulation in p-doped In0.35Ga0.65As/GaAs MQW lasers In: Institute of Physics Conference Series. Vol. 129. 949-

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RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J. and FLEISSNER, J., 1993. IEEE Journal of Quantum Electronics. 29, 1648-

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SCHNEIDER, H., LARKINS, E.C., RALSTON, J.D., FUCHS, F. and KOIDL, P., 1993. Applied Physics Letters. 63, 782-

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STOHR, A., HUMBACH, O., ZUMKLEY, S., WINGEN, G., DAVID, G., BOLLIG, B., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1993. Optical and Quantum Electronics. 25, S865-

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BENDER, G., LARKINS, E.C., SCHNEIDER, H., RALSTON, J.D. and KOIDL, P., 1993. Applied Physics Letters. 63, 2920-

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RALSTON, J.D., WEISSER, S., SCHONFELDER, A., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J. and TASKER, P.J., 1993. Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers In: IEEE LEOS 1993 Annual Meeting Proceedings. 637-

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SEELMANN-EGGEBERT, M., FASEL, R., LARKINS, E.C. and OSTERWALDER, J., 1993. Monolayer resolved X-ray excited Auger electron diffraction from single plane emission in GaAs Physical Review B: Condensed Matter. 48, 838-

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PHILLIPS, A.J., CRYAN, R.A. and SENIOR, J.M., 1993. Optical fibre PPM with optical preamplification In: Proceedings of the 5th Bangor Symposium on Communications. 284-

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CRYAN, R.A., PHILLIPS, A.J. and SENIOR, J.M., 1993. Optically pre-amplified n-ary PPM systems In: Proceedings SPIE. 72-

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CRYAN, R.A., PHILLIPS, A.J. and SENIOR, J.M., 1993. Optical fibre PPM employing direct detection optically preamplified receivers In: Proceedings SPIE. 138-

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CRAVEN, M. P., HAYES-GILL, B. R. and CURTIS, K. M., 1992. A Full Custom Analogue IC Using the Eurochip Design Route - A start up experience with the MIETEC 2.4mm Process In: Third Eurochip Workshop on VLSI Design Training, Grenoble, October 1992. 136-141
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Optics and Photonics Research Group

Faculty of Engineering
The 海角黑料
University Park
Nottingham, NG7 2RD


telephone: +44 (0)115 95 15536
email: optics@nottingham.ac.uk