Publications

Content: WANG, Z.M., BAEUMLER, M., JANTZ, W., BACHEM, K.H., LARKINS, E.C. and RALSTON, J.D., 1993. Journal of Crystal Growth. 126, 205-

Content: RALSTON, J. D., LARKINS, E. C., ROTHEMUND, W., ESQUIVAS, I., WEISSER, S., ROSENZWEIG, J. and FLEISSNER, J., 1993. Enhancements in MBE-grown High-speed GaAs an In0.35Ga0.65As MQW laser Structures using Binary Short-Period Superlattices Journal of Crystal Growth. 127(19),

Content: WAGNER, J., LARKINS, E.C., HERRES, N., RALSTON, J.D. and KOIDL, P., 1993. Applied Physics Letters. 63, 1842-

Content: RALSTON, J. D., WEISSER, S., ESQUIVAS, I., SCHONFELDER, A., LARKINS, E. C., ROSENZWEIG, J., TASKER, P. J., MAIER, M. and FLEISSNER, J., 1993. P-Dopant Incorporation and Influence on gain and Damping Behaviour in High-Speed GaAs-based Strained MQW Lasers In: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, at the 1993 E-MRS Spring Conference, 4th - 7th May 1993, Strasbourg, France..

Content: LARKINS, E.C., BENDER, G., SCHNEIDER, H., RALSTON, J.D., WAGNER, J., ROTHEMUND, W., DISCHLER, B., FLEISSNER, J. and KOIDL, P., 1993. Journal of Crystal Growth. 127, 62-

Content: RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., SCHONFELDER, A., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J., MAIER, M. and FLEISSNER, J., 1993. p-dopant incorporation and influence on gain and damping behavior in high-speed GaAs-based strained MQW lasers Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B21, 232-

Content: RALSTON, J.D., WEISSER, S., LARKINS, E.C., ESQUIVIAS, I., TASKER, P.J., FLEISSNER, J. and ROSENZWEIG, J., 1993. 30 GHz direct modulation in p-doped In_0.35Ga_0.65As/GaAs MQW lasers In: Institute of Physics Conference Series. Vol. 129. 949-

Content: RALSTON, J.D., WEISSER, S., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J., TASKER, P.J. and FLEISSNER, J., 1993. IEEE Journal of Quantum Electronics. 29, 1648-

Content: SCHNEIDER, H., LARKINS, E.C., RALSTON, J.D., FUCHS, F. and KOIDL, P., 1993. Applied Physics Letters. 63, 782-

Content: STOHR, A., HUMBACH, O., ZUMKLEY, S., WINGEN, G., DAVID, G., BOLLIG, B., LARKINS, E.C., RALSTON, J.D. and JAGER, D., 1993. Optical and Quantum Electronics. 25, S865-

Content: BENDER, G., LARKINS, E.C., SCHNEIDER, H., RALSTON, J.D. and KOIDL, P., 1993. Applied Physics Letters. 63, 2920-

Content: RALSTON, J.D., WEISSER, S., SCHONFELDER, A., ESQUIVIAS, I., LARKINS, E.C., ROSENZWEIG, J. and TASKER, P.J., 1993. Performance and optoelectronic integration of GaAs-based high-speed semiconductor lasers In: IEEE LEOS 1993 Annual Meeting Proceedings. 637-

Content: SEELMANN-EGGEBERT, M., FASEL, R., LARKINS, E.C. and OSTERWALDER, J., 1993. Monolayer resolved X-ray excited Auger electron diffraction from single plane emission in GaAs Physical Review B: Condensed Matter. 48, 838-

Content: MORGAN, S.P. and SEE, C.W. SOMEKH, M.G., 1993. A single source Phased Array for Imaging Through Scattering Media In: PHOTON TRANSPORT IN HIGHLY SCATTERING TISSUE, PROCEEDINGS OF. 98-107

Content: APPEL, K.R., SOMEKH M.G. and MORGAN, S.P., 1993. Absorbance method connecting continuous wave and time of flight transillumination In: Proc. SP. 2082:67-77

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