海角黑料

Optics and Photonics Research Group

Publications

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SUTTER, D.H., SCHNEIDER, H., WEISSER, S., RALSTON, J.D. and LARKINS, E.C., 1995. Applied Physics Letters. 67, 1809-

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RALSTON, J.D., LAUGHTON, F.R., CHAZON, P., LARKINS, E.C., MAIER, M., ABD RAHMAN, M.K. and WHITE, I.H., 1995. Electronics Letters. 31, 651-

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MIKULLA, M., BENZ, W., DALEIDEN, J., FLEISSNER, J., KAUFEL, G., WETZEL, A., LARKINS, E.C., MAIER, M., RALSTON, J.D. and ROSENZWEIG, J., 1995. Diodes laser trapezoidales de puissance (7.2 W QCW) a 1.02 µm In: Proceedings of journees national d''optique guidee.

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LARKINS, E.C. and HARRIS, J.S., 1995. Molecular Beam Epitaxy of High Quality GaAs and AlGaAs. In: Molecular Beam Epitaxy: Applications to Key Materials

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BURKNER, S., LARKINS, E.C., BAEUMLER, M., WAGNER, J., ROTHEMUND, W., FLEMIG, G. and RALSTON, J.D., 1995. Impurity-free selective interdiffusion of pseudomorphic InyGal-yAs/GaAs laser and modulator structures Materials Science and Technology. 11, 840-

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WEISSER, S., LARKINS, E.C., CZOTSCHER, K., BENZ, W., DALEIDEN, J., ESQUIVIAS, I., FLEISSNER, J., MAIER, M., RALSTON, J.D., ROMERO, B., SAH, R.E., SCHONFELDER, A. and ROSENZWEIG, J., 1995. CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions In: Proceedings of European Conference on Optical Communications (ECOC) 1995. 1015-

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WEISSER, S., LARKINS, E.C., CZOTSCHER, K., BENZ, W., DALEIDEN, J., FLEISSNER, J., MAIER, M., RALSTON, J.D., ROMERO, B., SCHONFELDER, A. and ROSENZWEIG, J., 1995. 37 GHz direct modulation bandwidth in short-cavity InGaAs/GaAs MQW lasers with C-doped active regions In: IEEE LEOS 1995 Annual Meeting Conference Proceedings. A91-

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SUTTER, D.H., SCHNEIDER, H., ROSENZWEIG, J., RALSTON, J.D. and LARKINS, E.C., 1995. Schaltung der Verstarkung in schnellen Laserdioden: Signalanalyse fur mittlere Intensitaten In: Deutschen Physikalischen Gesellschaft. 1160-

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BURKNER, S., RALSTON, J.D., WEISSER, S., LARKINS, E.C., SAH, R.E. and FLEISSNER, J., 1995. IEEE Photonics Technology Letters. 7, 941-

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BURKNER, S., MAIER, M., LARKINS, E.C., ROTHEMUND, W., O''REILLY, E.P. and RALSTON, J.D., 1995. Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGal-xAs and InyGal-yAs/GaAs MQW''s Journal of Electronic Materials. 24, 805-

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EHRET, S., SCHNEIDER, H., LARKINS, E.C. and RALSTON, J.D., 1995. Journal of Applied Physics. 77, 2537-

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SCHNEIDER, H. and LARKINS, E.C., 1995. Semiconductor Science and Technology. 10, 1329-

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LARKINS, E.C., BENZ, W., ROTHEMUND, W., WEISSER, S., SCHONFELDER, A., FLEISSNER, J., JANTZ, W., ROSENZWEIG, J. and RALSTON, J.D., 1995. IEEE Photonics Technology Letters. 7, 16-

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SAH, R.E., RALSTON, J.D., EICHIN, G., DISCHLER, B., ROTHEMUND, W., WAGNER, J. and LARKINS, E.C., 1995. Thin Solid Films. 259, 225-

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PHILLIPS, A.J., CRYAN, R.A. and SENIOR, J.M., 1995. Microwave and Optical Technology Letters. 10, 31-
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Optics and Photonics Research Group

Faculty of Engineering
The 海角黑料
University Park
Nottingham, NG7 2RD


telephone: +44 (0)115 95 15536
email: optics@nottingham.ac.uk