海角黑料

Optics and Photonics Research Group

Publications

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GRAMOTNEV DK, MATHER ML and NIEMIEN TA, 1998. Anomalous absorption of bulk longitudinal acoustic waves in a layered structure with viscous fluid In: IEEE Ultrasonics Symposium Proceedings, Sendi, Japan, October 1998.

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KECHE, M., WOOLFSON, M.S., HARRISON, I. and OUAMRI, A., 1998. IEE Proceedings - Radar, Sonar and Navigation. 145, 331-

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LARKINS,E.C., DODS,S.R.A., ANDRIANOV,A.V., MORGAN,J.HARRISON,I., BENSON,T.M. and ORTON,J.W., 1998. A highly integrated system for a fast, flexible and comprehensive characterisation of semiconductor lasers In: Lasers and Electro-Optics Europe, 1998. 1998 CLEO/Europe. 98

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KATSAVETS, N. I., LAWS, G. M., HARRISON, I., LARKINS, E. C., BENSON, T. M., CHENG, T. S. and FOXON, C. T., 1998. Semiconductors. VOL 32(NUMBER 10), 1048-1053

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LAWS,G.M., REN,G.B., HARRISON,I., LARKINS,E.C., ORTON,J.W., HOOPER,S.E. and CHENG,T.S., 1998. Electrical and optical characterisation of homojunction gallium nitride light emitting diodes In: Nitride Semiconductors. 1113-

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HO, H.P., HARRISON, I. and TUCK, B., 1998. Impurity induced disordering in AlAs-GaAs multiquantum well structures by Zn Diffusion In: IOP Solid State Conference 1998, Nottingham, UK.

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KRIBES, Y., HARRISON, I., TUCK, B. and CHENG, T.S., 1998. Journal of Crystal Growth. 190, 773-

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FLANNERY, L.B., HARRISON, I., LACKLISON, D.E., DYKEMAN, R.I. and CHENG, T.S., 1998. Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE Materials Science and Engineering B: Solid-State Materials for Advanced Technology. B50, 307-

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DEWSNIP, D.J., ANDRIANOV, A.V., HARRISON, I., ORTON, J.W., LACKLISON, D.E., REN, G.B., HOOPER, S.E. and CHENG, T.S., 1998. Semiconductor Science and Technology. 13, 500-

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DEWSNIP, D.J., ORTON, J.W., LACKLISON, D.E., FLANNERY, L.B., ANDRIANOV, A.V., HARRISON, I., HOOPER, S.E., CHENG, T.S., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. Semiconductor Science and Technology. 13, 927-

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BABA-ALI, N., HARRISON, I. and TUCK, B., 1998. Does sulphur induce disordering in GaAs-AlAs superlattices? In: IOP Solid State Conference 1998, Nottingham, UK.

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BELKOV, V.V., BOTNARYUK, V.M., FEDOROV, L.M., GONCHARUK, I.N., ULIN, V.P., ZHILYAEV, Y.V., CHENG, T.S., JEFFS, N.J., KATSAVETS, N.I. and HARRISON, I., 1998. Journal of Crystal Growth. 187, 29-

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CHENG, T.S., JEFFS, N.J., DEWSNIP, D.J., FLANNERY, L.B., ORTON, J.W., HARRISON, I., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. Magnesium-doped GaN films grown by molecular beam epitaxy on GaAs(111)B substrates Materials Science Forum. 264, 1217-

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CALLEJA, E., SANCHEZ-GARCIA, M.A., BASAK, D., SANCHEZ, F.J., CALLE, F., YOUINOU, P., MUNOZ, E., SERRANO, J.J., BLANCO, J.M., VILLAR, C., LAINE, T., OILA, J., SAARINEN, K., HAUTOJARVI, P., MOLLOY, C.H., SOMERFORD, D.J. and HARRISON, I., 1998. Physical Review B. 58, 1550-

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CHENG, T.S., JEFFS, N.J., DEWSNIP, D.J., FLANNERY, L.B., ORTON, J.W., HARRISON, I., BER, B.Y. and KUDRIAVTSEV, Y.A., 1998. Journal of Crystal Growth. 190, 516-
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Optics and Photonics Research Group

Faculty of Engineering
The 海角黑料
University Park
Nottingham, NG7 2RD


telephone: +44 (0)115 95 15536
email: optics@nottingham.ac.uk